p-Type Field Effect Transistors Based on Schottky Junction Ag@SnO Nanostructures-Reference-Cited by-同舟云学术

p-Type Field Effect Transistors Based on Schottky Junction Ag@SnO Nanostructures

Published:2019-04-17 Issue:5 Volume:1 Page:727-734
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Wang Weihao¹,Liao Qiufan²,Peng Xiaoli¹,Lu Qiaoqi¹,Li Zhao²,Zhang Tao¹,Wang Fengzhi¹,Pan Xinhua¹^ORCID,Zeng Yu-Jia²^ORCID,Ye Zhizhen¹^ORCID

Affiliation:

1. State Key Laboratory of Silicon Materials, Cyrus Tang Center for Sensor Materials and Applications, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, People’s Republic of China

2. Shenzhen Key Laboratory of Laser Engineering, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, People’s Republic of China

Funder

National Natural Science Foundation of China

Natural Science Foundation of Zhejiang Province

Shenzhen Science and Technology Project

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.9b00087

Reference48 articles.

1. p-channel thin-film transistor using p-type oxide semiconductor, SnO