2D/3D Hybrid of MoS2/GaN for a High-Performance Broadband Photodetector-Reference-Cited by-同舟云学术

2D/3D Hybrid of MoS2/GaN for a High-Performance Broadband Photodetector

Published:2021-05-02 Issue:5 Volume:3 Page:2407-2414
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Jain Shubhendra Kumar¹²³^ORCID,Low Mei Xian¹,Taylor Patrick D.⁴^ORCID,Tawfik Sherif Abdulkader⁴^ORCID,Spencer Michelle J.S.⁵^ORCID,Kuriakose Sruthi¹,Arash Aram¹^ORCID,Xu Chenglong⁶,Sriram Sharath¹^ORCID,Gupta Govind²³^ORCID,Bhaskaran Madhu¹^ORCID,Walia Sumeet¹⁷^ORCID

Affiliation:

1. Functional Materials and Microsystems Research Group and the Micro Nano Research Facility, RMIT University, Melbourne, Victoria 3000, Australia

2. Sensor Devices & Metrology Group, CSIR—National Physical Laboratory (CSIR-NPL), Dr K. S. Krishnan Road, New Delhi 110012, India

3. Academy of Scientific & Innovative Research, (AcSIR), CSIR-HRDC Campus, Ghaziabad, Uttar Pradesh 201002, India

4. School of Science, RMIT University, GPO Box 2476, Melbourne, Victoria 3001, Australia

5. ARC Centre of Excellence in Future Low-Energy Electronics Technologies (FLEET), School of Science, RMIT University, GPO Box 2476, Melbourne, Victoria 3001, Australia

6. Micro Nano Research Facility, RMIT University, Melbourne, Victoria 3001, Australia

7. School of Engineering, RMIT University, GPO Box 2476, Melbourne, Victoria 3001, Australia

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.1c00299

Reference37 articles.

1. Nitride-based semiconductors for blue and green light-emitting devices

2. Photoluminescence, Thermal Transport, and Breakdown in Joule-Heated GaN Nanowires

3. New concept ultraviolet photodetectors