Electric-Field-Induced Metal Filament Formation in Cobalt-Based CBRAM Observed by TEM-Reference-Cited by-同舟云学术

Electric-Field-Induced Metal Filament Formation in Cobalt-Based CBRAM Observed by TEM

Published:2023-03-08 Issue:3 Volume:5 Page:1834-1843
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Choi Yeon-Joon¹^ORCID,Bang Suhyun²,Kim Tae-Hyeon¹^ORCID,Hong Kyungho¹,Kim Sungjoon¹,Kim Sungjun³^ORCID,Park Byung-Gook¹,Choi Woo Young¹

Affiliation:

1. Inter-university Semiconductor Research Center (ISRC) and the Department of Electrical and Computer Engineering, Seoul National University, Seoul 08826, Republic of Korea

2. Samsung Electronics Co. Ltd., Hwaseong-si, Gyeonggi-do 18448, Republic of Korea

3. Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, Republic of Korea

Funder

Ministry of Education

National Research Foundation of Korea

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.3c00034

Reference65 articles.

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5. Challenges and Applications of Emerging Nonvolatile Memory Devices

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