Selective Area Regrowth Produces Nonuniform Mg Doping Profiles in Nonplanar GaN p–n Junctions-Reference-Cited by-同舟云学术

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Selective Area Regrowth Produces Nonuniform Mg Doping Profiles in Nonplanar GaN p–n Junctions

Published:2021-02-05 Issue:2 Volume:3 Page:704-710
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Chang Alexander S.¹^ORCID,Li Bingjun²,Wang Sizhen²,Nami Mohsen²^ORCID,Smeets Paul J. M.³^ORCID,Han Jung²,Lauhon Lincoln J.¹^ORCID

Affiliation:

1. Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States

2. Department of Electrical Engineering, Yale University, New Haven, Connecticut 06520, United States

3. Department of Materials Science and Engineering and NUANCE Center, Northwestern University, Evanston, Illinois 60208, United States

Funder

Advanced Research Projects Agency - Energy

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.0c00863

Reference64 articles.

1. Semiconductors for high‐voltage, vertical channel field‐effect transistors

2. A Survey of Wide Bandgap Power Semiconductor Devices

3. Design and Demonstration of High Breakdown Voltage GaN High Electron Mobility Transistor (HEMT) Using Field Plate Structure for Power Electronics Applications

4. Current status and scope of gallium nitride-based vertical transistors for high-power electronics application

5. High-performance lateral GaN Schottky barrier diode on silicon substrate with low turn-on voltage of 0.31 V, high breakdown voltage of 2.65 kV and high-power figure-of-merit of 2.65 GW cm−2

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1. Microscopic correlation of doping distribution and luminescence in a nitride laser junction by Photonic Atom Probe;Physical Review Materials;2024-07-18

2. Investigation of vertical GaN-on-GaN p–n diode with regrown p-GaN for operation in Venus and other extreme environments;Applied Physics Letters;2023-12-11

3. Selective area doping of GaN toward high-power applications;Journal of Physics D: Applied Physics;2023-06-13

4. Unveiling the influence of selective-area-regrowth interfaces on local electronic properties of GaN p-n junctions for efficient power devices;Nano Energy;2022-11

5. Morphology Control and Crystalline Quality of p-Type GaN Shells Grown on Coaxial GaInN/GaN Multiple Quantum Shell Nanowires;ACS Applied Materials & Interfaces;2021-11-03

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