Turn-On Voltage Shift of Metal–Insulator–Oxide Semiconductor Thin-Film Diode by Adding Schottky Diode in Reverse Direction-Reference-Cited by-同舟云学术

Turn-On Voltage Shift of Metal–Insulator–Oxide Semiconductor Thin-Film Diode by Adding Schottky Diode in Reverse Direction

Published:2019-03-22 Issue:4 Volume:1 Page:530-537
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Park Jun-Woo¹,Lee Donggun¹,Cho Nam-Kwang¹,Lee Jinwon²,Kim Youn Sang¹³^ORCID

Affiliation:

1. Program in Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul 08826, Republic of Korea

2. Samsung Display Company, Ltd, 181 Samsung-ro, Tangjeong-myeon, Asan-si, Chungcheongnam-do 31454, Republic of Korea

3. Advanced Institute of Convergence Technology, 145 Gwanggyo-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do 16229, Republic of Korea

Funder

National Research Foundation of Korea

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.8b00138

Reference24 articles.

1. A high performance MIM capacitor using HfO2 dielectrics

2. High-K materials and metal gates for CMOS applications

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4. Advancing MIM Electronics: Amorphous Metal Electrodes

5. Engineering the current–voltage characteristics of metal–insulator–metal diodes using double-insulator tunnel barriers

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