High Sensitivity of Extended-Gate Field-Effect Transistors Based on 1-D ZnO:Ag Nanomaterials through a Cheap Photochemical Synthesis as pH Sensors at Room Temperature-Reference-Cited by-同舟云学术

High Sensitivity of Extended-Gate Field-Effect Transistors Based on 1-D ZnO:Ag Nanomaterials through a Cheap Photochemical Synthesis as pH Sensors at Room Temperature

Published:2024-01-24 Issue:2 Volume:6 Page:712-723
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Chu Yen-Lin¹²^ORCID,Young Sheng-Joue¹^ORCID,Tsai Shih-Hsin¹,Arya Sandeep³^ORCID,Chu Tung-Te⁴

Affiliation:

1. Department of Electronic Engineering, National United University, Miaoli City 36063, Taiwan

2. Department of Central Engineering, Advanced Semiconductor Engineering, Inc., Kaohsiung 811, Taiwan

3. Department of Physics, University of Jammu, Jammu, Jammu and Kashmir 180006, India

4. Department of Mechanical Automation Engineering, Kao Yuan University, Kaohsiung 821, Taiwan

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.3c01138

Reference94 articles.

1. Development of an Ion-Sensitive Solid-State Device for Neurophysiological Measurements

2. ZnO and AZO Film Potentiometric pH Sensors Based on Flexible Printed Circuit Board

3. Biosensor technology: Technology push versus market pull

4. Highly sensitive palladium oxide thin film extended gate FETs as pH sensor

5. The pH Response and Sensing Mechanism of n-Type ZnO/Electrolyte Interfaces

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