Record-High Hole Mobility Germanium on Flexible Plastic with Controlled Interfacial Reaction-Reference-Cited by-同舟云学术

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Record-High Hole Mobility Germanium on Flexible Plastic with Controlled Interfacial Reaction

Published:2021-12-21 Issue:1 Volume:4 Page:269-275
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Imajo Toshifumi¹^ORCID,Ishiyama Takamitsu¹,Saitoh Noriyuki²,Yoshizawa Noriko³,Suemasu Takashi¹,Toko Kaoru¹^ORCID

Affiliation:

1. Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japan

2. Electron Microscope Facility, TIA, AIST, 1-2-1 Namiki, Tsukuba, Ibaraki 305-8564, Japan

3. Global Zero Emission Research Center, AIST, 1-1-1 Umezono, Tsukuba 305-8569, Japan

Funder

New Energy and Industrial Technology Development Organization

Japan Society for the Promotion of Science

Yazaki Memorial Foundation for Science and Technology

TEPCO Memorial Foundation

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.1c00997

Reference55 articles.

1. Resistivity, mobility and impurity levels in GaAs, Ge, and Si at 300°K

2. Crystallization in amorphous germanium

3. Fabrication of high-quality p-MOSFET in Ge grown heteroepitaxially on Si

4. Germanium MOSFET Devices: Advances in Materials Understanding, Process Development, and Electrical Performance

5. Dramatic enhancement of low electric-field hole mobility in metal source/drain Ge p-channel metal-oxide-semiconductor field-effect transistors by introduction of Al and Hf into SiO2/GeO2 gate stack

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4. Low temperature (210 °C) fabrication of Ge MOS capacitor and controllability of its flatband voltage;Materials Science in Semiconductor Processing;2024-08

5. Effect of Deposition Temperature on the Electrical Properties of Solid-Phase Crystallized Ge Thin Films;Electronic Materials Letters;2024-06-24

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