Complementary Trilayer–Bulk Black Phosphorus Heterojunction Tunnel Field-Effect Transistor with Subthermionic Subthreshold Swing-Reference-Cited by-同舟云学术

Complementary Trilayer–Bulk Black Phosphorus Heterojunction Tunnel Field-Effect Transistor with Subthermionic Subthreshold Swing

Author:

Kim Seungho¹,Myeong Gyuho¹,Park Jeehoon¹,Jin Taehyuk¹,Watanabe Kenji²^ORCID,Taniguchi Takashi²^ORCID,Lee Chulho³,Cho Sungjae¹^ORCID

Affiliation:

1. Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea

2. National Institute for Materials Science, Namiki Tsukuba, Ibaraki 305-0044, Japan

3. KU-KIST Graduate School of Converging Science & Technology, Korea University, Seoul 02841, Korea

Funder

National Research Foundation of Korea

Core Research for Evolutional Science and Technology

Japan Society for the Promotion of Science

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

Reference41 articles.

2. International Roadmap for Devices and Systems (2017 Edition); https://irds.ieee.org/roadmap-2017.

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