Ultrahigh Negative Infrared Photoconductance in Highly As-Doped Germanium Nanowires Induced by Hot Electron Trapping-Reference-Cited by-同舟云学术

Ultrahigh Negative Infrared Photoconductance in Highly As-Doped Germanium Nanowires Induced by Hot Electron Trapping

Published:2020-06-30 Issue:7 Volume:2 Page:1934-1942
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

John John Wellington¹,Dhyani Veerendra¹,Georgiev Yordan M.²³⁴,Gangnaik Anushka S.²^ORCID,Biswas Subhajit²^ORCID,Holmes Justin D.²^ORCID,Das Amit K.⁵,Ray Samit K.⁶^ORCID,Das Samaresh¹^ORCID

Affiliation:

1. Centre for Applied Research in Electronics, Indian Institute of Technology Delhi, New Delhi 110016, India

2. School of Chemistry and AMBER Centre, University College Cork, Cork, T12 YN60, Ireland

3. Institute of Ion Beam Physics and Material Research, Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstraße, 400, 01328, Dresden, Germany

4. Institute of Electronics at Bulgarian Academy of Sciences, 72, Tsarigradsko Chausse Blvd., 1784 Sofia, Bulgaria

5. Laser Material Processing Division, Raja Ramanna Centre for Advanced Technology, Indore 452 013, India

6. S. N. Bose National Centre for Basic Sciences, Salt Lake City, Kolkata − 700106, India

Funder

Science and Engineering Research Board

Science Foundation Ireland

Department of Science and Technology, Ministry of Science and Technology

Ministry of Human Resource Development

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.0c00245

Reference33 articles.

1. Reduced pressure–chemical vapor deposition of Ge thick layers on Si(001) for 1.3–1.55-μm photodetection

2. High speed and high responsivity germanium photodetector integrated in a Silicon-On-Insulator microwaveguide

3. Strained germanium thin film membrane on silicon substrate for optoelectronics

4. Ge-on-Si approaches to the detection of near-infrared light

5. Study of intersubband transition in quantum dots and quantum dot infrared photodetectors

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