Monolithic High-Mobility InAs on Oxide Grown at Low Temperature-Reference-Cited by-同舟云学术

Monolithic High-Mobility InAs on Oxide Grown at Low Temperature

Published:2020-06-04 Issue:7 Volume:2 Page:1997-2002
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Sarkar Debarghya¹^ORCID,Tao Jun¹^ORCID,Ahsan Ragib¹^ORCID,Yang Dingzhu¹,Orvis Thomas²,Weng Sizhe¹,Greer Frank³,Ravichandran Jayakanth²^ORCID,Sideris Constantine¹^ORCID,Kapadia Rehan¹^ORCID

Affiliation:

1. Ming Hsieh Department of Electrical and Computer Engineering, University of Southern California, Los Angeles, California 90089, United States

2. Mork Family Department of Chemical Engineering and Materials Science, University of Southern California, Los Angeles, California 90089, United States

3. Microdevices Laboratory, NASA Jet Propulsion Laboratory, California Institute of Technology, Pasadena, California 91109, United States

Funder

Army Research Office

Air Force Office of Scientific Research

University of Southern California

Semiconductor Research Corporation

National Aeronautics and Space Administration

National Science Foundation

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.0c00285

Reference32 articles.

1. Fenouillet-Beranger, C.; Previtali, B.; Batude, P.; Nemouchi, F.; Casse, M.; Garros, X.; Tosti, L.; Rambal, N.; Lafond, D.; Dansas, H. FDSOI bottom MOSFETs stability versus top transistor thermal budget featuring 3D monolithic integration, 44th European Solid State Device Research Conference (ESSDERC), 2014, pp 110–113.

2. Ultrathin compound semiconductor on insulator layers for high-performance nanoscale transistors

3. Recent progress in lasers on silicon

4. Wafer-scale integration of group III–V lasers on silicon using transfer printing of epitaxial layers

5. GaAs photovoltaics and optoelectronics using releasable multilayer epitaxial assemblies

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