Molecular Strategies for Configurational Sulfur Doping of Group IV Semiconductors Grown on Si(100) Using S(MH3)2 (M = Si,Ge) Delivery Sources: An Experimental and Theoretical Inquiry-Reference-Cited by-同舟云学术

Molecular Strategies for Configurational Sulfur Doping of Group IV Semiconductors Grown on Si(100) Using S(MH3)2 (M = Si,Ge) Delivery Sources: An Experimental and Theoretical Inquiry

Published:2014-07-14 Issue:15 Volume:26 Page:4447-4458
ISSN:0897-4756
Container-title:Chemistry of Materials
language:en
Short-container-title:Chem. Mater.

Author:

Kouvetakis J.¹,Favaro R.²,Grzybowski G. J.¹,Senaratne C.¹,Menéndez J.²,Chizmeshya A. V. G.¹

Affiliation:

1. Department of Chemistry and Biochemistry, Arizona State University, Tempe, Arizona 85287-1604, United States

2. Department of Physics, Arizona State University, Tempe, Arizona 85287-1504, United States

Funder

Division of Materials Research

Air Force Office of Scientific Research

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,General Chemical Engineering,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/cm501434z

Reference41 articles.

1. Insulator-to-Metal Transition in Sulfur-Doped Silicon

2. Strong sub-band-gap infrared absorption in silicon supersaturated with sulfur

3. Enhanced visible and near-infrared optical absorption in silicon supersaturated with chalcogens

4. Near-unity below-band-gap absorption by microstructured silicon

5. Tailoring the Absorption Properties of Black Silicon

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