Chemical Vapor Deposition of GaP and GaAs Thin Films From [nBu2Ga(μ-EtBu2)2GanBu2] (E = P or As) and Ga(PtBu2)3-Reference-Cited by-同舟云学术

Chemical Vapor Deposition of GaP and GaAs Thin Films From [nBu2Ga(μ-EtBu2)2GanBu2] (E = P or As) and Ga(PtBu2)3

Published:2011-11-15 Issue:23 Volume:23 Page:5217-5222
ISSN:0897-4756
Container-title:Chemistry of Materials
language:en
Short-container-title:Chem. Mater.

Author:

Cheng Fei¹,George Kathryn¹,Hector Andrew L.¹,Jura Marek²,Kroner Anna³,Levason William¹,Nesbitt John⁴,Reid Gillian¹,Smith David C.⁴,Wilson James W.⁴

Affiliation:

1. School of Chemistry, University of Southampton, Southampton SO17 1BJ, U.K.

2. ISIS, STFC, Harwell Innovation Campus, Didcot, Oxfordshire, OX11 0QX, U.K.

3. Diamond Light Source plc, Harwell Innovation Campus, Didcot, Oxfordshire OX11 0DE, U.K.

4. School of Physics and Astronomy, University of Southampton, Southampton SO17 1BJ, U.K.

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,General Chemical Engineering,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/cm202158a

Reference29 articles.

1. Malik, M. A.; O’Brien, P.InGroup 13 Metals Aluminium, Gallium, Indium and Thallium,2nd ed;Aldridge, S., Downs, A. J., Eds.Wiley;London, 2011, p612.

2. The Use of Metal-Organics in the Preparation of Semiconductor Materials

3. Precursor Chemistry for Main Group Elements in Semiconducting Materials

4. Supercritical Fluid−Liquid−Solid Synthesis of Gallium Phosphide Nanowires

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