In Situ Infrared Spectroscopic Study of Atomic Layer-Deposited TiO2 Thin Films by Nonaqueous Routes-Reference-Cited by-同舟云学术

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In Situ Infrared Spectroscopic Study of Atomic Layer-Deposited TiO2 Thin Films by Nonaqueous Routes

Published:2013-04-02 Issue:9 Volume:25 Page:1706-1712
ISSN:0897-4756
Container-title:Chemistry of Materials
language:en
Short-container-title:Chem. Mater.

Author:

Bernal Ramos Karla¹,Clavel Guylhaine²,Marichy Catherine²,Cabrera Wilfredo¹,Pinna Nicola³,Chabal Yves J.¹

Affiliation:

1. Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080, United States

2. Department of Chemistry, CICECO, University of Aveiro, 3810-193 Aveiro, Portugal

3. Humboldt-Universität zu Berlin, Institut für Chemie, Brook-Taylor-Strasse 2, 12489 Berlin, Germany

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,General Chemical Engineering,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/cm400164a

Reference37 articles.

1. A 45nm Logic Technology with High-k+Metal Gate Transistors, Strained Silicon, 9 Cu Interconnect Layers, 193nm Dry Patterning, and 100% Pb-free Packaging

2. Atomic Layer Deposition of Oxide Thin Films with Metal Alkoxides as Oxygen Sources

3. Non-aqueous sol–gel routes applied to atomic layer deposition of oxides

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