Fast Growth of Strain-Free AlN on Graphene-Buffered Sapphire-Reference-Cited by-同舟云学术

Fast Growth of Strain-Free AlN on Graphene-Buffered Sapphire

Published:2018-09-03 Issue:38 Volume:140 Page:11935-11941
ISSN:0002-7863
Container-title:Journal of the American Chemical Society
language:en
Short-container-title:J. Am. Chem. Soc.

Author:

Qi Yue,Wang Yunyu¹²,Pang Zhenqian³⁴,Dou Zhipeng,Wei Tongbo¹²,Gao Peng⁵^ORCID,Zhang Shishu,Xu Xiaozhi,Chang Zhenghua³⁴,Deng Bing,Chen Shulin,Chen Zhaolong,Ci Haina,Wang Ruoyu,Zhao Fuzhen⁶,Yan Jianchang¹²,Yi Xiaoyan¹²,Liu Kaihui⁵^ORCID,Peng Hailin⁷^ORCID,Liu Zhiqiang¹²,Tong Lianming^ORCID,Zhang Jin⁷^ORCID,Wei Yujie³⁴^ORCID,Li Jinmin¹²,Liu Zhongfan⁷^ORCID

Affiliation:

1. Research and Development Center for Solid State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

2. University of Chinese Academy of Sciences, Beijing 100049, China

3. LNM, Institute of Mechanics, Chinese Academy of Sciences, Beijing, 100190, China

4. School of Engineering Sciences, University of Chinese Academy of Sciences, Beijing 100049, China

5. Collaborative Innovation Centre of Quantum Matter, Beijing 100871, China

6. College of Science, China University of Petroleum, Qingdao 266580, China

7. Beijing Graphene Institute (BGI), Beijing 100095, China

Funder

Ministry of Science and Technology of the People's Republic of China

Natural Science Foundation of Beijing Municipality

National Natural Science Foundation of China