(SiC)x(AlN)1−x Solid-Solution Substrate for High Temperature and High Power Devices-Reference-Cited by-同舟云学术

(SiC)x(AlN)1−x Solid-Solution Substrate for High Temperature and High Power Devices

Published:2010-07-14 Issue:8 Volume:10 Page:3508-3514
ISSN:1528-7483
Container-title:Crystal Growth & Design
language:en
Short-container-title:Crystal Growth & Design

Author:

Singh Narsingh B.¹,Wagner Brian¹,Berghmans Andre¹,Knuteson David J.¹,McLaughlin Sean¹,Kahler David¹,Thomson Darren¹,King Matthew¹

Affiliation:

1. Northrop Grumman Corporation, ES- ATL, 1212 Winterson Road, Linthicum, Maryland 21090

Publisher

American Chemical Society (ACS)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/cg100395a

Reference12 articles.

1. Interface properties of an AlN/(AlN) x (SiC)1-x /4H-SiC heterostructure

2. Gu, Z.; Edgar, J. H.; Payzant, E. A.; Meyer, H. M.; Walker, L. R.; Sarua, A.; Kuball, M.MRS Symp. Proc. 2004, 831.

3. SiC-Based Solid Solutions: Technology and Properties

4. Physical vapor transport growth of large AlN crystals

5. Singh, N. B.; Jones, E.; Berghmans, A.; Wagner, B. P.; Jelen, E.; McLaughlin, S.; Knuteson, D. J.; King, M.; Fitelson, M.; Kahler, D. J.Cryst. Res. Technol., in press.

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4. Synthesis, crystal structure and photoluminescence of novel blue-emitting Eu2+-doped (SiC)x–(AlN)1−xphosphors by a nitriding combustion reaction;RSC Adv.;2014-11-14

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