Evolution of a Native Oxide Layer at the a-Si:H/c-Si Interface and Its Influence on a Silicon Heterojunction Solar Cell-Reference-Cited by-同舟云学术

Evolution of a Native Oxide Layer at the a-Si:H/c-Si Interface and Its Influence on a Silicon Heterojunction Solar Cell

Published:2015-11-24 Issue:48 Volume:7 Page:26522-26529
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Liu Wenzhu¹²,Meng Fanying¹,Zhang Xiaoyu¹,Liu Zhengxin¹

Affiliation:

1. Research Center for New Energy Technology, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences (CAS), Jiading, 201800 Shanghai, People’s Republic of China

2. University of Chinese Academy of Sciences (UCAS), Shijingshan, 100049 Beijing, People’s Republic of China

Funder

Chinese Academy of Sciences

Ministry of Science and Technology of the People's Republic of China

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.5b07709

Reference45 articles.

1. Achievement of More Than 25% Conversion Efficiency With Crystalline Silicon Heterojunction Solar Cell

2. Obtaining a higherVoc in HIT cells

3. The Amorphous/Crystalline Silicon Interface Research of HIT Solar Cells by Simulation

4. An approach for improving the carriers transport properties of a-Si:H/c-Si heterojunction solar cells with efficiency of more than 27%

5. Roles of the Fermi level of doped a-Si:H and band offsets at a-Si:H/c-Si interfaces in n-type HIT solar cells

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