Roles of the Fermi level of doped a-Si:H and band offsets at a-Si:H/c-Si interfaces in n-type HIT solar cells-Reference-Cited by-同舟云学术

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Roles of the Fermi level of doped a-Si:H and band offsets at a-Si:H/c-Si interfaces in n-type HIT solar cells

Published:2013-11 Issue: Volume:97 Page:168-175
ISSN:0038-092X
Container-title:Solar Energy
language:en
Short-container-title:Solar Energy

Author:

Shen Leilei,Meng Fanying,Liu Zhengxin

Funder

Knowledge Innovation Engineering of Chinese Academy of Science

National Program of Chinese Ministry of Science and Technology

Publisher

Elsevier BV

Subject

General Materials Science,Renewable Energy, Sustainability and the Environment

Reference29 articles.

1. Role of front contact work function on amorphous silicon/crystalline silicon heterojunction solar cell performance;Centurioni;IEEE Electron Device Letters,2003

2. Simulation and study of the influence of the buffer intrinsic layer, back-surface field, densities of interface defects, resistivity of p-type silicon substrate and transparent conductive oxide on heterojunction with intrinsic thin-layer (HIT) solar cell;Dao;Solar Energy,2010

3. Effect of valence band offset and surface passivation quality in the silicon heterojunction solar cells;Dao;Journal of the Electrochemical Society,2011

4. 21% Efficient silicon heterojunction solar cells on n- and p-type wafers compared;Descoeudres;IEEE Journal of Photovoltaics,2013

5. Simulation approach for optimization of device structure and thickness of HIT solar cells to achieve similar to 27% efficiency;Dwivedi;Solar Energy,2013

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