Abnormal Behavior of Threshold Voltage Shift in Bias-Stressed a-Si:H Thin Film Transistor under Extremely High Intensity Illumination
Author:
Affiliation:
1. Display Research Center, Samsung Display Co., Yongin, Gyeonggi-do 446-920, South Korea
Funder
Samsung
Publisher
American Chemical Society (ACS)
Subject
General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/acsami.5b03609
Reference38 articles.
1. Studies of the new findings in preparing a scaled amorphous silicon thin-film transistor
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3. Characteristics of a-SiGe:H Thin Film Transistor Infrared Photosensor for Touch Sensing Displays
4. A Thienoisoindigo-Naphthalene Polymer with Ultrahigh Mobility of 14.4 cm2/V·s That Substantially Exceeds Benchmark Values for Amorphous Silicon Semiconductors
5. Submicron Ambipolar Nanocrystalline Silicon Thin-Film Transistors and Inverters
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2. P‐1.5: Influence of Bandgap of SiNx Gate Insulator on the Degradation Behavior of Amorphous Silicon Thin‐Film Transistors under Reliability Test;SID Symposium Digest of Technical Papers;2024-04
3. 32.4: Abnormal Turnaround Phenomenon of Threshold Voltage Shifts in Bias‐Stressed a‐Si:H Thin Film Transistor under Extremely High Intensity Illumination;SID Symposium Digest of Technical Papers;2021-08
4. P‐16: Turnaround Phenomenon of Threshold Voltage Shifts in Bias‐Stressed a‐Si:H Thin‐Film Transistor under Extremely High Intensity Illumination;SID Symposium Digest of Technical Papers;2021-05
5. Dual-mechanism modelling of instability in nanocrystalline silicon thin film transistors under prolonged gate-bias stress;Thin Solid Films;2018-04
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