Interfacial n-Doping Using an Ultrathin TiO2 Layer for Contact Resistance Reduction in MoS2
Author:
Affiliation:
1. Department of Electrical Engineering, IIT Bombay, Mumbai 400076, India
2. Technical Physics Division, BARC, Mumbai 400085, India
Funder
Department of Science and Technology, Ministry of Science and Technology
Confederation of Indian Industry
Publisher
American Chemical Society (ACS)
Subject
General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/acsami.5b08559
Reference37 articles.
1. Nobel Lecture: Random walk to graphene
2. Extraordinary Physical Properties of Functionalized Graphene
3. Few-Layer MoS2: A Promising Layered Semiconductor
4. The rise of graphene
5. Two-dimensional gas of massless Dirac fermions in graphene
Cited by 117 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Tuning the Schottky barrier height in single- and bi-layer graphene-inserted MoS2/metal contacts;Scientific Reports;2024-09-08
2. Improving 2D Schottky contacts using an intralayer strategy;Device;2024-08
3. Enhanced contact resistance reduction in MoS2 transistors via ultrathin LiPON electrode interface doping;Journal of Vacuum Science & Technology B;2024-07-01
4. Reducing contact resistance of MoS2-based field effect transistors through uniform interlayer insertion via atomic layer deposition;The Journal of Chemical Physics;2024-03-08
5. van der Waals Contact for Two-Dimensional Transition Metal Dichalcogenides;Chemical Reviews;2024-03-01
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3