Control of the Metal–Insulator Transition in VO2 Epitaxial Film by Modifying Carrier Density
Author:
Affiliation:
1. National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029, P.R. China
2. Institute of High Energy Physics, Chinese Academy of Science, Beijing 100049, P.R. China
Funder
Ministry of Education of the People's Republic of China
Ministry of Science and Technology of the People's Republic of China
National Natural Science Foundation of China
Publisher
American Chemical Society (ACS)
Subject
General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/acsami.5b00540
Reference33 articles.
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