Highly Stable and Tunable Chemical Doping of Multilayer WS2 Field Effect Transistor: Reduction in Contact Resistance
Author:
Affiliation:
1. Department of Physics and Graphene Research Institute, Sejong University, Seoul 143-747, Korea
Funder
National Research Foundation of Korea
Publisher
American Chemical Society (ACS)
Subject
General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/acsami.5b06825
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