Reversible Transition of Semiconducting PtSe<sub>2</sub> and Metallic PtTe<sub>2</sub> for Scalable All-2D Edge-Contacted FETs-Reference-Cited by-同舟云学术

Reversible Transition of Semiconducting PtSe₂ and Metallic PtTe₂ for Scalable All-2D Edge-Contacted FETs

Published:2023-12-27 Issue: Volume: Page:
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Han Sang Sub¹,Sattar Shahid²^ORCID,Kireev Dmitry³⁴⁵^ORCID,Shin June-Chul¹⁶,Bae Tae-Sung⁷,Ryu Hyeon Ih⁸,Cao Justin,Shum Alex Ka,Kim Jung Han⁹^ORCID,Canali Carlo Maria²,Akinwande Deji³⁴^ORCID,Lee Gwan-Hyoung⁶^ORCID,Chung Hee-Suk¹⁰,Jung Yeonwoong¹^ORCID

Affiliation:

1. NanoScience Technology Center, University of Central Florida, Orlando, Florida 32826, United States

2. Department of Physics and Electrical Engineering, Linnaeus University, Kalmar SE-39231, Sweden

3. Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78758, United States

4. Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758, United States

5. Department of Biomedical Engineering, University of Massachusetts Amherst, Amherst, Massachusetts 01003, United States

6. Department of Materials Science and Engineering, Seoul National University, Seoul 08826, Republic of Korea

7. Center for Research Equipment, Korea Basic Science Institute, Daejeon 34133, Republic of Korea

8. Analytical Research Division, Korea Basic Science Institute, Jeonju 54907, Republic of Korea

9. Department of Materials Science and Engineering, Dong-A University, Busan 49315, Republic of Korea

10. Electron Microscopy and Spectroscopy Team, Korea Basic Science Institute, Daejeon 34133, Republic of Korea

Funder

Vetenskapsr?det

Ministry of Science and ICT, South Korea

Ministry of Trade, Industry and Energy

Korea Basic Science Institute

Division of Civil, Mechanical and Manufacturing Innovation

Division of Materials Research

Cockrell Family Regents Chair Endowment

Commercialization Promotion Agency for Research and Development Outcomes

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.3c03666

Reference51 articles.

1. Electronic and Optoelectronic Applications Based on 2D Novel Anisotropic Transition Metal Dichalcogenides

2. Two-dimensional materials for next-generation computing technologies

3. Electrical contacts to two-dimensional semiconductors

4. Approaching the Schottky–Mott limit in van der Waals metal–semiconductor junctions

5. Schottky barrier heights in two-dimensional field-effect transistors: from theory to experiment

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