High-Quality Solution-Processed Silicon Oxide Gate Dielectric Applied on Indium Oxide Based Thin-Film Transistors
Author:
Affiliation:
1. Evonik Industries AG, 45772 Marl, Germany
2. Lehrstuhl für Werkstoffe und Nanoelektronik, Ruhr-Universität Bochum, 44801 Bochum, Germany
Publisher
American Chemical Society (ACS)
Subject
General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/acsami.5b03105
Reference47 articles.
1. Materials for Printable, Transparent, and Low-Voltage Transistors
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