Water-Soluble Thin Film Transistors and Circuits Based on Amorphous Indium–Gallium–Zinc Oxide

Author:

Jin Sung Hun1,Kang Seung-Kyun2,Cho In-Tak3,Han Sang Youn24,Chung Ha Uk2,Lee Dong Joon2,Shin Jongmin3,Baek Geun Woo1,Kim Tae-il5,Lee Jong-Ho3,Rogers John A.6

Affiliation:

1. Department of Electronic Engineering, Incheon National University, Incheon 406-772, Korea

2. Department of Materials Science and Engineering and Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana−Champaign, Urbana, Illinois 61801, United States

3. Department of Electrical Engineering, Seoul National University, Seoul 151-600, Korea

4. Display R&D Center, Samsung Display Co., Yongin-city, Gyeongki-do 446–711, Korea

5. Center for Neuroscience Imaging Research (CNIR), Institute of Basic Science (IBS), School of Chemical Engineering, Sungkyunkwan University (SKKU), Suwon, Gyeonggi-do 440-746, Korea

6. Department of Materials Science and Engineering, Chemistry, Mechanical Science and Engineering, Electrical and Computer Engineering, Beckman Institute for Advanced Science and Technology, and Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana−Champaign, Urbana, Illinois 61801, United States

Funder

Incheon National University

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

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