Chemical Sensing of 2D Graphene/MoS2 Heterostructure device-Reference-Cited by-同舟云学术

Chemical Sensing of 2D Graphene/MoS2 Heterostructure device

Published:2015-07-22 Issue:30 Volume:7 Page:16775-16780
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Cho Byungjin¹,Yoon Jongwon²,Lim Sung Kwan²,Kim Ah Ra¹,Kim Dong-Ho¹,Park Sung-Gyu¹,Kwon Jung-Dae¹,Lee Young-Joo¹,Lee Kyu-Hwan³,Lee Byoung Hun²,Ko Heung Cho²,Hahm Myung Gwan¹

Affiliation:

1. Department of Advanced Functional Thin Films, Surface Technology Division, Korea Institute of Materials Science (KIMS), 797 Changwondaero, Sungsan-Gu, Changwon, Gyeongnam 642-831, Republic of Korea

2. School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro, Buk-Gu, Gwangju 500-712, Republic of Korea

3. Electrochemistry Department, Surface Technology Division, Korea Institute of Materials Science (KIMS), 797 Changwondaero, Sungsan-Gu, Changwon, Gyeongnam 642-831, Republic of Korea

Funder

National Research Foundation of Korea

Korean Institute of Materials Science

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.5b04541

Reference47 articles.

1. Phonon and Raman scattering of two-dimensional transition metal dichalcogenides from monolayer, multilayer to bulk material

2. Physical and chemical tuning of two-dimensional transition metal dichalcogenides