Highly Sensitive Wide Bandwidth Photodetector Based on Internal Photoemission in CVD Grown p-Type MoS2/Graphene Schottky Junction-Reference-Cited by-同舟云学术

Highly Sensitive Wide Bandwidth Photodetector Based on Internal Photoemission in CVD Grown p-Type MoS2/Graphene Schottky Junction

Published:2015-07-13 Issue:28 Volume:7 Page:15206-15213
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Vabbina PhaniKiran¹,Choudhary Nitin²,Chowdhury Al-Amin.¹,Sinha Raju¹,Karabiyik Mustafa¹,Das Santanu²,Choi Wonbong²,Pala Nezih¹

Affiliation:

1. INSYST Laboratory, Electrical and Computer Engineering, Florida International University, Miami, Florida 33174, United States

2. Nanomaterials and Device Laboratory, Department of Materials Science and Engineering, University of North Texas, Denton, Texas 76207, United States

Funder

National Science Foundation

University Graduate School, Florida International University

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.5b00887

Reference44 articles.

1. Ultrafast graphene photodetector

2. Highly sensitive wide bandwidth photodetectors using chemical vapor deposited graphene

3. Graphene photonics and optoelectronics

4. Gate-Activated Photoresponse in a Graphene p–n Junction

5. CMOS-compatible graphene photodetector covering all optical communication bands

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