Highly Transparent, Visible-Light Photodetector Based on Oxide Semiconductors and Quantum Dots-Reference-Cited by-同舟云学术

Highly Transparent, Visible-Light Photodetector Based on Oxide Semiconductors and Quantum Dots

Published:2015-08-25 Issue:35 Volume:7 Page:19666-19671
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Shin Seung Won¹,Lee Kwang-Ho²,Park Jin-Seong²,Kang Seong Jun¹

Affiliation:

1. Department of Advanced Materials Engineering for Information and Electronics, Kyung Hee University, 1732 Deogyeong-daero, Giheung-gu, Yongin, Gyeonggi-do 446-701, Republic of Korea

2. Division of Materials Science and Engineering, Hanyang University, 222 Wangsimni-ro, Seoul 133-719, Republic of Korea

Funder

National Research Foundation of Korea

Ministry of Science, ICT and Future Planning

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.5b04683

Reference17 articles.

1. Dual-Gate Characteristics of Amorphous $ \hbox{InGaZnO}_{4}$ Thin-Film Transistors as Compared to Those of Hydrogenated Amorphous Silicon Thin-Film Transistors

2. A 128×96 Pixel, 50 µm Pixel Pitch Transparent Readout Circuit Using Amorphous In–Ga–Zn–O Thin-Film Transistor Array with Indium–Tin Oxide Electrodes for an Organic Image Sensor

3. High-Performance Light-Erasable Memory and Real-Time Ultraviolet Detector Based on Unannealed Indium–Gallium–Zinc–Oxide Thin-Film Transistor

4. High performance thin film transistors with cosputtered amorphous indium gallium zinc oxide channel

5. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

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