Promoting Photosensitivity and Detectivity of the Bi/Si Heterojunction Photodetector by Inserting a WS2 Layer-Reference-Cited by-同舟云学术

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Promoting Photosensitivity and Detectivity of the Bi/Si Heterojunction Photodetector by Inserting a WS2 Layer

Published:2015-11-23 Issue:48 Volume:7 Page:26701-26708
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Yao Jiandong¹,Zheng Zhaoqiang¹,Shao Jianmei¹,Yang Guowei¹

Affiliation:

1. State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science and Engineering, School of Physics and Engineering, Sun Yat-sen University, Guangzhou, Guangdong 510275, People’s Republic of China

Funder

State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.5b08677

Reference40 articles.

1. Monolayer Graphene/Germanium Schottky Junction As High-Performance Self-Driven Infrared Light Photodetector

2. Graphene-On-Silicon Schottky Junction Solar Cells

3. A high‐gain, high‐bandwidth In0.53Ga0.47As/InP heterojunction phototransistor for optical communications

4. Light Generation and Harvesting in a van der Waals Heterostructure

5. Near-Infrared Light Photovoltaic Detector Based on GaAs Nanocone Array/Monolayer Graphene Schottky Junction

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