Study of Graphene-based 2D-Heterostructure Device Fabricated by All-Dry Transfer Process-Reference-Cited by-同舟云学术

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Study of Graphene-based 2D-Heterostructure Device Fabricated by All-Dry Transfer Process

Published:2016-02-01 Issue:5 Volume:8 Page:3072-3078
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Tien Dung Hoang¹,Park Jun-Young¹,Kim Ki Buem¹,Lee Naesung¹,Choi Taekjib¹,Kim Philip²,Taniguchi Takashi³,Watanabe Kenji³,Seo Yongho¹

Affiliation:

1. Faculty of Nanotechnology & Advanced Materials, HMC, and GRI, Sejong University, Seoul 143-747, South Korea

2. Department of Physics, Harvard University, Cambridge, Massachusetts 02138, United States

3. National Institute of Materials Science, Ibaraki 305-0044, Japan

Funder

National Research Foundation of Korea

Ministry of Trade, Industry and Energy

Ministry of Education, Republic of Korea

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.5b10370

Reference45 articles.

1. Screening Effect and Impurity Scattering in Monolayer Graphene

2. Atomic Structure of Graphene on SiO2

3. Giant Intrinsic Carrier Mobilities in Graphene and Its Bilayer

4. Substrate-limited electron dynamics in graphene

5. Intrinsic and extrinsic performance limits of graphene devices on SiO2

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