Support−Catalyst−Gas Interactions during Carbon Nanotube Growth on Metallic Ta Films-Reference-Cited by-同舟云学术

Support−Catalyst−Gas Interactions during Carbon Nanotube Growth on Metallic Ta Films

Published:2011-03-03 Issue:11 Volume:115 Page:4359-4369
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Bayer B. C.¹,Hofmann S.¹,Castellarin-Cudia C.²³,Blume R.⁴,Baehtz C.⁵,Esconjauregui S.¹,Wirth C. T.¹,Oliver R. A.⁶,Ducati C.⁶,Knop-Gericke A.⁴,Schlögl R.⁴,Goldoni A.³,Cepek C.²,Robertson J.¹

Affiliation:

1. Department of Engineering, University of Cambridge, Cambridge, CB3 0FA, United Kingdom

2. Istituto Officina dei Materiali-CNR, Laboratorio TASC, s.s. 14 km 163.5, I-34149 Trieste, Italy

3. Sincrotrone Trieste SCpA, s.s. 14 km 163.5, I-34012 Trieste, Italy

4. Fritz-Haber-Institut der Max-Planck-Gesellschaft, D-14195 Berlin-Dahlem, Germany

5. Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, D-01314 Dresden, Germany

6. Department of Materials Science and Metallurgy, University of Cambridge, Cambridge, CB2 3QZ, United Kingdom

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/jp102986f

Reference59 articles.

1. Carbon nanotubes in interconnect applications

2. Simultaneous Formation of Multiwall Carbon Nanotubes and their End-Bonded Ohmic Contacts to Ti Electrodes for Future ULSI Interconnects

3. Carbon Nanotube Growth Technologies Using Tantalum Barrier Layer for Future ULSIs with Cu/Low-kInterconnect Processes

4. Synthesis of a Closely Packed Carbon Nanotube Forest by a Multi-Step Growth Method Using Plasma-Based Chemical Vapor Deposition

5. Carbon nanotubes for interconnects in future integrated circuits: The challenge of the density

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