Energy-Band Engineering for Improved Charge Retention in Fully Self-Aligned Double Floating-Gate Single-Electron Memories-Reference-Cited by-同舟云学术

Energy-Band Engineering for Improved Charge Retention in Fully Self-Aligned Double Floating-Gate Single-Electron Memories

Published:2011-10-17 Issue:11 Volume:11 Page:4520-4526
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Tang Xiaohui¹,Krzeminski Christophe²,Lecavelier des Etangs-Levallois Aurélien²,Chen Zhenkun²,Dubois Emmanuel²,Kasper Erich³,Karmous Alim³,Reckinger Nicolas¹,Flandre Denis¹,Francis Laurent A.¹,Colinge Jean-Pierre⁴,Raskin Jean-Pierre¹

Affiliation:

1. Institute of Information and Communication Technologies, Electronics and Applied Mathematics (ICTEAM), Université catholique de Louvain, Place du Levant, 3, B-1348 Louvain-la-Neuve, Belgium

2. Institut d’Electronique, de Microélectronique et de Nanotechnologie, IEMN/ISEN UMR CNRS 8520, Avenue Poincaré, Cité Scientifique, F-59652 Villeneuve d’Ascq Cedex, France

3. University Stuttgart, Institut für Halbleitertechnik, Pfaffenwaldring 47, Stuttgart, D-70569, Germany

4. Tyndall National Institute, University College Cork, Dyke Parade, Cork, Ireland

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl202434k

Reference30 articles.

1. Nonvolatile Flash Memory Device Using Ge Nanocrystals Embedded in HfAlO High-<tex>$kappa$</tex>Tunneling and Control Oxides: Device Fabrication and Electrical Performance

2. Charge-trap memory device fabricated by oxidation of Si/sub 1-x/Ge/sub x/

3. Single electron memory devices utilizing Al[sub 2]O[sub 3] tunnel oxide barriers

4. Resistive Switches and Memories from Silicon Oxide

Cited by 19 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Double-floating-gate memory device based on energy band engineered van der Waals heterostructure;Applied Physics Letters;2023-09-25

2. Flexible SnO Optoelectronic Memory Based on Light-Dependent Ionic Migration in Ruddlesden–Popper Perovskite;Nano Letters;2021-12-29

3. Flexible Floating Gate Memory;Flexible and Stretchable Medical Devices;2018-02-23

4. Recent Advances of Flexible Data Storage Devices Based on Organic Nanoscaled Materials;Small;2018-01-29

5. A star polymer with a metallo-phthalocyanine core as a tunable charge storage material for nonvolatile transistor memory devices;Journal of Materials Chemistry C;2018