Theoretical Study of Structural and Vibrational Properties of Al3N3, Ga3N3, and In3N3-Reference-Cited by-同舟云学术

Theoretical Study of Structural and Vibrational Properties of Al3N3, Ga3N3, and In3N3

Published:2001-06-06 Issue:26 Volume:105 Page:6080-6084
ISSN:1520-6106
Container-title:The Journal of Physical Chemistry B
language:en
Short-container-title:J. Phys. Chem. B

Author:

Kandalam Anil K.¹,Blanco M. A.¹,Pandey Ravindra¹

Affiliation:

1. Department of Physics, Michigan Technological University, Houghton, Michigan 49931, and Departamento de Química Física y Analítica, Universidad de Oviedo, 33006-Oviedo, Spain

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Surfaces, Coatings and Films,Physical and Theoretical Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/jp004404p

Reference18 articles.

1. Application of aluminum nitride films for electronic devices

2. The Chemical Vapor Deposition of Aluminum Nitride: Unusual Cluster Formation in the Gas Phase

3. H2GaN3 and Derivatives: A Facile Method to Gallium Nitride

4. Theoretical spectrum of AlN

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