Mechanisms for Substrate-Enhanced Growth during the Early Stages of Atomic Layer Deposition of Alumina onto Silicon Nitride Surfaces-Reference-Cited by-同舟云学术

Mechanisms for Substrate-Enhanced Growth during the Early Stages of Atomic Layer Deposition of Alumina onto Silicon Nitride Surfaces

Published:2012-03-06 Issue:6 Volume:24 Page:1080-1090
ISSN:0897-4756
Container-title:Chemistry of Materials
language:en
Short-container-title:Chem. Mater.

Author:

Lamagna Luca¹,Wiemer Claudia¹,Perego Michele¹,Spiga Sabina¹,Rodríguez Jesús²,Santiago Coll David²,Grillo Maria Elena²³,Klejna Sylwia³,Elliott Simon D.³

Affiliation:

1. Laboratorio MDM, IMM-CNR, via C. Olivetti 2, 20864 Agrate Brianza (MB), Italy

2. Centro de Quimica, IVIC, Apartado 21827 Caracas 1020 A, Venezuela

3. Tyndall National Institute, University College Cork, Lee Maltings, Cork, Ireland

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,General Chemical Engineering,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/cm203362d

Reference60 articles.

1. Performance and Reliability Features of Advanced Nonvolatile Memories Based on Discrete Traps (Silicon Nanocrystals, SONOS)

2. Charge transport and storage of low programming voltage SONOS/MONOS memory devices

3. Future challenges of flash memory technologies

4. Charge-trapping memory cell of SiO2∕SiN∕high‐k dielectric Al2O3 with TaN metal gate for suppressing backward-tunneling effect

5. Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water process

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