Equipment for Low Temperature Steady-State Growth of Silicon from Metallic Solutions
Author:
Affiliation:
1. Institute for Crystal Growth, Max-Born-Strasse 2, 12489 Berlin, Germany
Publisher
American Chemical Society (ACS)
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Link
https://pubs.acs.org/doi/pdf/10.1021/cg800120q
Reference9 articles.
1. Structure of PECVD Si:H films for solar cell applications
2. Aluminum-induced crystallization of amorphous silicon on glass substrates above and below the eutectic temperature
3. Progress with polycrystalline silicon thin-film solar cells on glass at UNSW
4. A method to grow silicon crystallites on glass
5. Gravity effect on dissolution and growth of silicon in the In-Si system
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1. In situ removal of a native oxide layer from an amorphous silicon surface with a UV laser for subsequent layer growth;CrystEngComm;2018
2. Solution growth of Si on reorganized porous Si foils and on glass substrates;Journal of Crystal Growth;2017-06
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