Reducing Extrinsic Performance-Limiting Factors in Graphene Grown by Chemical Vapor Deposition-Reference-Cited by-同舟云学术

Reducing Extrinsic Performance-Limiting Factors in Graphene Grown by Chemical Vapor Deposition

Published:2012-03-12 Issue:4 Volume:6 Page:3224-3229
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Chan Jack,Venugopal Archana,Pirkle Adam¹,McDonnell Stephen²,Hinojos David,Magnuson Carl W.²,Ruoff Rodney S.²,Colombo Luigi³,Wallace Robert M.,Vogel Eric M.¹

Affiliation:

1. School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States

2. Department of Mechanical Engineering and Materials Science and Engineering Program, The University of Texas at Austin, One University Station C2200, Austin, Texas 78712, United States

3. Texas Instruments Incorporated, Dallas, Texas 75243, United States

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/nn300107f

Reference25 articles.

1. Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils

2. Hysteresis reversion in graphene field-effect transistors

3. Electrical transport properties of graphene on SiO2 with specific surface structures

4. The effect of vacuum annealing on graphene

5. Tuning the Fermi Level of SiO2-Supported Single-Layer Graphene by Thermal Annealing

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