Tuning the Fermi Level of SiO2-Supported Single-Layer Graphene by Thermal Annealing-Reference-Cited by-同舟云学术

Tuning the Fermi Level of SiO2-Supported Single-Layer Graphene by Thermal Annealing

Published:2010-03-26 Issue:15 Volume:114 Page:6894-6900
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Nourbakhsh A.¹,Cantoro M.¹,Klekachev A.¹,Clemente F.¹,Sorée B.¹,van der Veen M. H.¹,Vosch T.¹,Stesmans A.¹,Sels B.¹,De Gendt S.¹

Affiliation:

1. imec, Kapeldreef 75, B-3001 Leuven, Belgium, Department of Microbial and Molecular Systems, Katholieke Universiteit Leuven, Kasteelpark Arenberg 23, B-3001 Leuven, Belgium, Department of Physics and Astronomy, Katholieke Universiteit Leuven, Celestijnenlaan 200d, B-3001 Leuven, Belgium, and Department of Chemistry, Katholieke Universiteit Leuven, Celestijnenlaan 200f, B-3001 Leuven, Belgium

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/jp910085n

Reference64 articles.

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4. Doping Graphene with Metal Contacts

5. Electric Field Effect Tuning of Electron-Phonon Coupling in Graphene

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