MOCVD Growth of Gallium Sulfide Using Di-tert-butyl Gallium Dithiocarbamate Precursors: Formation of a Metastable Phase of GaS
Author:
Affiliation:
1. Department of Chemistry, Rice University, Houston, Texas 77005, and Department of Chemistry, University of Houston, Houston, Texas 77204
Publisher
American Chemical Society (ACS)
Subject
Materials Chemistry,General Chemical Engineering,General Chemistry
Link
https://pubs.acs.org/doi/pdf/10.1021/cm9903632
Reference49 articles.
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4. Chemical Vapor Deposition of Hexagonal Gallium Selenide and Telluride Films from Cubane Precursors: Understanding the Envelope of Molecular Control
5. Metal-Organic chemical vapour deposition of polycrystalline tetragonal indium sulphide (InS) thin films
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