Synthesis of Gallium Chalcogenide Cubanes and Their Use as CVD Precursors for Ga2E3 (E = S, Se)-Reference-Cited by-同舟云学术

Synthesis of Gallium Chalcogenide Cubanes and Their Use as CVD Precursors for Ga2E3 (E = S, Se)

Published:1996-10-29 Issue:22 Volume:15 Page:4880-4883
ISSN:0276-7333
Container-title:Organometallics
language:en
Short-container-title:Organometallics

Author:

Schulz Stephan¹,Gillan Edward G.¹,Ross Jean L.¹,Rogers Lillian M.¹,Rogers Robin D.¹,Barron Andrew R.¹

Affiliation:

1. Departments of Chemistry, University of Iowa, Iowa City, Iowa 52242, The University of Alabama, Tuscaloosa, Alabama 35487, and Rice University, Houston, Texas 77005

Publisher

American Chemical Society (ACS)

Subject

Inorganic Chemistry,Organic Chemistry,Physical and Theoretical Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/om960480w

Reference25 articles.

1. MOCVD of group III chalcogenides

2. Chemical vapor deposition of cubic gallium sulfide thin films: a new metastable phase

3. Enhancement of photoluminescence intensity of GaAs with cubic GaS chemical vapor deposited using a structurally designed single‐source precursor

4. Gallium Arsenide Transistors: Realization Through a Molecularly Designed Insulator

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