Quantitative Analysis on the Growth of Negative Ions in Pulse-Modulated SiH4 Plasmas
Author:
Affiliation:
1. Department of Chemical Engineering, Kangwon National University, Chuncheon, Kangwon-Do 200-701, Korea
Publisher
American Chemical Society (ACS)
Subject
Industrial and Manufacturing Engineering,General Chemical Engineering,General Chemistry
Link
https://pubs.acs.org/doi/pdf/10.1021/ie0503803
Reference43 articles.
1. High deposition rate amorphous and polycrystalline silicon materials using the pulsed plasma and “Hot-Wire” CVD techniques
2. Progress in high deposition rate amorphous and polycrystalline silicon materials using the pulsed plasma and hot wire CVD deposition techniques
3. Growth of particles in cluster-size range in low pressure and low power SiH4 rf discharges
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