Mixed-Dimensional InSe–Si Heterojunction Nanostructures for Self-Powered Broadband Photodetectors-Reference-Cited by-同舟云学术

Mixed-Dimensional InSe–Si Heterojunction Nanostructures for Self-Powered Broadband Photodetectors

Published:2021-11-26 Issue:12 Volume:4 Page:12932-12936
ISSN:2574-0970
Container-title:ACS Applied Nano Materials
language:en
Short-container-title:ACS Appl. Nano Mater.

Author:

Yang Xuxuan¹,Liu Zhiying¹,Gao Feng²,Zhang Shichao²,Shang Huiming²,Hu Yunxia²,Zhang Yunxiao³,Fu Zhendong³,Huang Yuewu⁴,Feng Wei¹^ORCID,Hu PingAn²^ORCID

Affiliation:

1. School of Chemistry, Chemical Engineering and Resource Utilization, Northeast Forestry University, Harbin 150040, China

2. Key Laboratory of Microsystem and Microstructure of Ministry of Education, Harbin Institute of Technology, Harbin 150080, China

3. Tianjin Jinhang Technical Physics Institute, No. 58 Zhong Huan Xi Road, Tianjin Airport Economic Zone, Tianjin 300308, China

4. College of Science, Harbin University of Science and Technology, Harbin 150080, China

Funder

National Natural Science Foundation of China

Heilongjiang Natural Science Foundation

National Key Research and Development Program of China

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsanm.1c03100

Reference26 articles.

1. Third-generation infrared photodetector arrays

2. Photonics and optoelectronics of 2D semiconductor transition metal dichalcogenides

3. Photodetectors based on graphene, other two-dimensional materials and hybrid systems

4. Progress, Challenges, and Opportunities for 2D Material Based Photodetectors

5. Perspectives on photodetectors based on selenides and their van der Waals heterojunctions

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