Surface Oxide Characterization and Interface Evolution in Atomic Layer Deposition of Al2O3 on InP(100) Studied by in Situ Infrared Spectroscopy-Reference-Cited by-同舟云学术

Surface Oxide Characterization and Interface Evolution in Atomic Layer Deposition of Al2O3 on InP(100) Studied by in Situ Infrared Spectroscopy

Published:2014-03-06 Issue:11 Volume:118 Page:5862-5871
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Cabrera W.¹,Halls M. D.²,Povey I. M.³,Chabal Y. J¹

Affiliation:

1. Department of Material Science and Engineering, The University of Texas at Dallas, 800 W. Campbell Road, Richardson, Texas 75080-3021, United States

2. Schrödinger Inc., 5820 Oberlin Dr. Ste. 203, San Diego, California 92121, United States

3. Tyndall National Institute, University College Cork, Lee Maltings, Dyke Parade, Cork, Ireland

Funder

National Science Foundation

Science Foundation Ireland

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/jp412455y

Reference62 articles.

1. Benchmarking Nanotechnology for High-Performance and Low-Power Logic Transistor Applications

2. Nanometre-scale electronics with III–V compound semiconductors

3. Interfacial chemistry of oxides on InxGa(1−x)As and implications for MOSFET applications

4. Atomic Layer Deposition of Dielectrics on Ge and III–V Materials for Ultrahigh Performance Transistors

5. Surface passivation of III–V semiconductors for future CMOS devices—Past research, present status and key issues for future

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