Direct Quantification of Gold along a Single Si Nanowire-Reference-Cited by-同舟云学术

Direct Quantification of Gold along a Single Si Nanowire

Published:2008-10-25 Issue:11 Volume:8 Page:3709-3714
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Bailly A.¹,Renault O.¹,Barrett N.¹,Zagonel L. F.¹,Gentile P.¹,Pauc N.¹,Dhalluin F.¹,Baron T.¹,Chabli A.¹,Cezar J. C.¹,Brookes N. B.¹

Affiliation:

1. CEA-LETI, MINATEC, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France, CEA-DSM/IRAMIS/SPCSI, CEA Saclay, 91191 Gif-sur-Yvette, France, CEA-DSM/INAC/SP2M/SiNaPS, 17 rue des Martyrs, 38054 Grenoble cedex 9, France, CNRS-LTM, UMR 5129, 17 rue des Martyrs, 38054 Grenoble cedex 9, France, and ESRF, 6 rue Jules Horowitz, BP220, 38043 Grenoble cedex 09, France

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl801952a

Reference27 articles.

1. Semiconductor nanowires

2. High Performance Silicon Nanowire Field Effect Transistors

3. Effect of diborane on the microstructure of boron-doped silicon nanowires

Cited by 49 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. New growth mechanism of InAs-GaSb core-shell nanowires with polygonal triangular pyramids and quantum dots grown by MOCVD;Vacuum;2024-07

2. New growth mechanism of InAs nanowires array in selective-area growth by MOCVD;Vacuum;2023-02

3. Superior Thermoelectric Performance of SiGe Nanowires Epitaxially Integrated into Thermal Micro‐Harvesters;Small;2023-01-31

4. A study on repeatable and universal growth morphology optimization for nanowires grown on Si substrates;Vacuum;2022-07

5. Superior Thermoelectric Performance of Sige Nws Epitaxially Integrated into Thermal Micro-Harvesters;SSRN Electronic Journal;2022