Self-Modulating Interfacial Cation Migration Induced Threshold Switching in Bilayer Oxide Memristive Device-Reference-Cited by-同舟云学术

Self-Modulating Interfacial Cation Migration Induced Threshold Switching in Bilayer Oxide Memristive Device

Published:2018-12-18 Issue:1 Volume:123 Page:878-885
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Yin Jun¹²,Zeng Fei¹²³^ORCID,Wan Qin¹²,Sun Yiming¹,Hu Yuandong¹²,Liu Jialu¹²,Li Guoqi²,Pan Feng¹

Affiliation:

1. Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, People’s Republic of China

2. Center for Brain Inspired Computing Research (CBICR), Tsinghua University, Beijing 100084, People’s Republic of China

3. Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, People’s Republic of China

Funder

Ministry of Science and Technology of the People's Republic of China

National Natural Science Foundation of China

Center for Brain Inspired Computing Research, Tsinghua University

Key Laboratory of Microelectronic Devices Integrated Technology

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.8b09793

Reference52 articles.