Controlled Electron–Hole Trapping and Detrapping Process in GdAlO3 by Valence Band Engineering-Reference-Cited by-同舟云学术

Controlled Electron–Hole Trapping and Detrapping Process in GdAlO3 by Valence Band Engineering

Published:2016-03-10 Issue:11 Volume:120 Page:5916-5925
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Luo Hongde¹,Bos Adrie J. J.¹,Dorenbos Pieter¹

Affiliation:

1. Faculty of Applied Sciences, Department of Radiation Science and Technology (FAME-RST), Delft University of Technology, Mekelweg 15, 2629JB Delft, The Netherlands

Funder

Ministerie van Economische Zaken

Technologiestichting STW

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.6b00129

Reference39 articles.

1. Persistent Luminescence Materials

2. Persistent Luminescence in Eu2+-Doped Compounds: A Review

3. Persistent Luminescence in Non-Eu2+-Doped Compounds: A Review

4. Storage Phosphors for Medical Imaging

5. Control of electron transfer between Ce3+ and Cr3+ in the Y3Al5−xGaxO12 host via conduction band engineering

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