Control of electron transfer between Ce3+ and Cr3+ in the Y3Al5−xGaxO12 host via conduction band engineering-Reference-Cited by-同舟云学术

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Control of electron transfer between Ce3+ and Cr3+ in the Y3Al5−xGaxO12 host via conduction band engineering

Published:2015 Issue:22 Volume:3 Page:5642-5651
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Ueda Jumpei¹²³⁴⁵,Dorenbos Pieter⁶⁷⁸⁹¹⁰,Bos Adrie J. J.⁶⁷⁸⁹¹⁰,Kuroishi Keisuke¹²³⁴,Tanabe Setsuhisa¹²³⁴

Affiliation:

1. Graduate School of Human and Environmental Studies

2. Kyoto University

3. Kyoto 606-8501

4. Japan

5. Graduate School of Global Environmental Studies

6. Luminescence Materials Research Group

7. section FAME-RST

8. Faculty of Applied Sciences

9. Delft University of Technology

10. 2629 JB Delft

Abstract

Charging efficiency by blue light and trap depth were controlled via conduction band engineering in Y₃Al_5−xGa_xO₁₂:Ce³⁺–Cr³⁺.

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2015/TC/C5TC00546A

Reference47 articles.

1. Analysis of Ce3+ luminescence quenching in solid solutions between Y3Al5O12 and Y3Ga5O12 by temperature dependence of photoconductivity measurement

2. Optical and photoconductive properties of cerium-doped crystalline solids

3. Temperature dependent spectroscopic studies of the electron delocalization dynamics of excited Ce ions in the wide band gap insulator, Lu2SiO5

4. Thermally stimulated electron delocalization and luminescence quenching of Ce impurities inGdAlO3

5. Temperature and compositional dependence of optical and optoelectronic properties in Ce3+-doped Y3Sc2Al3−xGaxO12 (x=0, 1, 2, 3)

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