Geometry-Dependent Auger Recombination Process in Semiconductor Nanostructures-Reference-Cited by-同舟云学术

Geometry-Dependent Auger Recombination Process in Semiconductor Nanostructures

Published:2017-10-16 Issue:42 Volume:121 Page:23811-23816
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

He Yan¹,Ouyang Gang¹^ORCID

Affiliation:

1. Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of Ministry of Education, Synergetic Innovation Center for Quantum Effects and Applications (SICQEA), Hunan Normal University, Changsha 410081, China

Funder

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.7b08553

Reference60 articles.

1. Multicarrier Interactions in Semiconductor Nanocrystals in Relation to the Phenomena of Auger Recombination and Carrier Multiplication

2. Spectroscopic and Device Aspects of Nanocrystal Quantum Dots

3. Origin and control of blinking in quantum dots

4. Quantization of Multiparticle Auger Rates in Semiconductor Quantum Dots

5. Fluorescence intermittency in single cadmium selenide nanocrystals

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