A perspective on optimizing photoelectric conversion process in 2D transition-metal dichalcogenides and related heterostructures

Author:

Dong Jiansheng1,Zhao Yipeng2,Ouyang Gang1ORCID,Yang Guowei3ORCID

Affiliation:

1. Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of Ministry of Education, Key Laboratory for Matter Microstructure and Function of Hunan Province, School of Physics and Electronics, Hunan Normal University, Changsha 410081, China

2. College of Physics and Electronic Engineering, Hengyang Normal University, Hengyang 421008, China

3. State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials Science and Engineering, Sun Yat-sen (Zhongshan) University, Guangzhou 510275, China

Abstract

As a type of layered two-dimensional (2D) structure, transition-metal dichalcogenides (TMDs) and related heterostructures have recently received much attention in applications such as electronics, optoelectronics, and energy conversion/storage. The changes in the atomic bond nature in 2D TMDs, including bond length, bond angle, and bond energy, are the key factors affecting the performance of these systems. Some modulations, such as strain engineering and geometry effect, provide effective methods to enhance the related performance of devices constructed by 2D TMDs by a change in the bond nature. In this Perspective, we review our recent works done on photoelectric conversion properties of 2D TMDs and related heterostructures under various conditions, analyze the underlying mechanism of different modulation modes, and then identify the key factors determining optimal optoelectronic properties at the atomic level.

Funder

National Natural Science Foundation of China

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

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