First-Principles Calculations That Clarify Energetics and Reactions of Oxygen Adsorption and Carbon Desorption on 4H-SiC (112̅0) Surface
Author:
Affiliation:
1. Department of Applied Physics, The University of Tokyo, Hongo, Tokyo 113-8656, Japan
2. Institut de Physique et Chimie des Matériaux de Strasbourg, University of Strasbourg-CNRS UMR 7504, 23 rue du Loess, F-67034 Strasbourg, France
Funder
Agence Nationale de la Recherche
Ministry of Education, Culture, Sports, Science and Technology
Japan Society for the Promotion of Science
Publisher
American Chemical Society (ACS)
Subject
Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials
Link
https://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.6b11942
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5. Characterization of silicon dioxide films on 4H-SiC (0001) Si, (1-100) M, and (11-20) A faces by cathodoluminescence spectroscopy
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