SnS Nanoflake-Based Field Effect Transistor with an Anisotropic Gate Effect and a Polarization-Dependent Raman Response-Reference-Cited by-同舟云学术

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SnS Nanoflake-Based Field Effect Transistor with an Anisotropic Gate Effect and a Polarization-Dependent Raman Response

Published:2022-07-26 Issue:30 Volume:126 Page:12660-12668
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Xu Ruihan¹,Gong Hanzhe¹,Yao Wendian²,Peng Xiaoniu¹^ORCID,Li Dehui²^ORCID,Yuan Hui¹,Wang Xina¹^ORCID

Affiliation:

1. Hubei Key Laboratory of Ferro & Piezoelectric Materials and Devices, Faculty of Physics and Electronic Science, Hubei University, Wuhan 430062, China

2. School of Optical and Electronic Information and Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China

Funder

National Natural Science Foundation of China

Excellent Youth Foundation of Hubei Province

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.2c03433

Reference40 articles.

1. Electric Field Effect in Atomically Thin Carbon Films

2. Recent Advances in Growth of Novel 2D Materials: Beyond Graphene and Transition Metal Dichalcogenides

3. Phosphorene: An Unexplored 2D Semiconductor with a High Hole Mobility

4. Extraordinary Photoluminescence and Strong Temperature/Angle-Dependent Raman Responses in Few-Layer Phosphorene

5. Polarization-Resolved Raman Study of Bulk-like and Davydov-Induced Vibrational Modes of Exfoliated Black Phosphorus

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3. High-Pressure Synthesis of Single-Crystalline SnS Nanoribbons;Nano Letters;2023-08-09

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