Sn-Guided Defect-Free GeSn Lateral Growth on Si by Molecular Beam Epitaxy-Reference-Cited by-同舟云学术

Sn-Guided Defect-Free GeSn Lateral Growth on Si by Molecular Beam Epitaxy

Published:2015-07-21 Issue:31 Volume:119 Page:17842-17847
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Zhang Dalin¹,Liu Zhi¹,Zhang Dongliang¹,Zhang Xu¹,Zhang Junying¹,Zheng Jun¹,Zuo Yuhua¹,Xue Chunlai¹,Li Chuanbo¹,Oda Shunri²,Cheng Buwen¹,Wang Qiming¹

Affiliation:

1. State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, No. A35, Qinghua East Road, Haidian District, Beijing 100083, People’s Republic of China

2. Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, O-okayama, Meguro-ku, Tokyo 152-8552, Japan

Funder

Chinese Academy of Sciences

Beijing Municipal Science and Technology Commission

National Natural Science Foundation of China

Natural Science Foundation of Beijing Municipality

Japan Society for the Promotion of Science

Ministry of Science and Technology of the People's Republic of China

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.5b03735

Reference25 articles.

1. The Past, Present, and Future of Silicon Photonics

2. XOR and XNOR operations at 125 Gb/s using cascaded carrier-depletion microring resonators

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5. Compositional dependence of the bowing parameter for the direct and indirect band gaps in Ge1−ySny alloys

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